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| SUM55N03-16P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.016 @ VGS = 10 V 0.024 @ VGS = 4.5 V ID (A) 55 45 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested APPLICATIONS D High-Side Core DC/DC - Desktop - Server D DDR DC/DC Converter D TO-263 G DRAIN connected to TAB G DS S Ordering Information: SUM55N03-16P--E3 (Lead Free) N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C d TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 55 39 50 25 31.25 93b 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72632 S-40465--Rev. A, 15-Mar-04 www.vishay.com PCB Mountc Symbol RthJA RthJC Limit 40 1.6 Unit _C/W 1 SUM55N03-16P Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Drain Source On State Resistancea rDS(on) VGS = 10 V, ID = 15 A, TJ = 125_C VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 4.5 V, ID = 10 A Forward Transconductancea gfs VDS = 15 V, ID = 20 A 10 0.019 50 0.0128 0.016 0.025 0.031 0.024 S W 30 1 3 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Gate Resistance Turn-On Delay Timeb Rise Timeb Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W 2.7 VDS = 15 V, VGS = 10 V, ID = 50 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 215 70 17 5 2.5 5.5 7 20 25 12 8.25 15 30 40 20 ns W 26 nC pF Turn-Off Delay Timeb Fall Timeb Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM Qrr IF = 40 A, di/dt = 100 A/ms m IF = 20 A, VGS = 0 V 1.0 25 1.2 0.15 55 50 1.5 70 2.5 0.09 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72632 S-40465--Rev. A, 15-Mar-04 SUM55N03-16P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 60 50 I D - Drain Current (A) 40 4V 30 20 10 3V 0 0 2 4 6 8 10 Vishay Siliconix Output Characteristics 60 VGS = 10 thru 5 V 50 I D - Drain Current (A) 40 30 20 10 0 0 1 Transfer Characteristics TC = 125_C 25_C -55_C 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 60 TC = -55_C r DS(on) - On-Resistance ( W ) 50 g fs - Transconductance (S) 40 30 20 10 0 0 5 10 15 20 25 30 25_C 125_C 0.0400 0.0500 On-Resistance vs. Drain Current 0.0300 VGS = 4.5 V 0.0200 VGS = 10 V 0.0100 0.0000 0 10 20 30 40 50 60 ID - Drain Current (A) ID - Drain Current (A) 1500 Capacitance Ciss 10 VDS = 15 V ID = 50 A Gate Charge 1200 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) 8 900 6 600 Coss Crss 4 300 2 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 72632 S-40465--Rev. A, 15-Mar-04 0 0 3 6 9 12 15 18 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM55N03-16P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.1 On-Resistance vs. Junction Temperature VGS = 10 V ID = 15 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage r DS(on) - On-Resistance (W) (Normalized) 1.8 1.5 10 TJ = 150_C 1.2 TJ = 25_C 0.9 0.6 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 40 Drain Source Breakdown vs. Junction Temperature 38 V (BR)DSS (V) ID = 250 mA 36 34 32 30 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72632 S-40465--Rev. A, 15-Mar-04 SUM55N03-16P New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 60 50 I D - Drain Current (A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) 100 Vishay Siliconix Safe Operating Area 10 ms 100 ms Limited by rDS(on) 10 1 ms 10 ms 100 ms dc 1 TC = 25_C Single Pulse 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 Normalized Thermal Transient Impedance, Junction-to-Case 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 72632 S-40465--Rev. A, 15-Mar-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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